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參數(shù)資料
| 型號(hào)： | IRG41BC30UD |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8.9A I(C) | TO-220FP |
| 中文描述： | 晶體管| IGBT的|正陳| 600V的五（巴西）國(guó)際消費(fèi)電子展| 8.9AI（丙）|至220FP |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 262K |
| 代理商： | IRG41BC30UD |
IRG4IBC30UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
2.5kV, 60s insulation voltage
4.8 mm creapage distance to heatsink
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
Tighter parameter distribution
Industry standard Isolated TO-220 Fullpak
TM
outline
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.95V
@V
GE
= 15V, I
C
= 12A
7/17/2000
PD91753A
Parameter
Typ.
–––
–––
–––
2.0 (0.07)
Max.
2.8
4.1
65
–––
Units
R
θ
JC
R
θ
JC
R
θ
JA
Wt
www.irf.com
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
TO-220 FULLPAK
1
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
17
8.9
92
92
8.5
92
2500
± 20
45
18
Units
V
V
CES
I
C
@ T
C
= 25
°
C
I
C
@ T
C
= 100
°
C
I
CM
I
LM
I
F
@ T
C
= 100
°
C
I
FM
Visol
V
GE
P
D
@ T
C
= 25
°
C
P
D
@ T
C
= 100
°
C
T
J
T
STG
A
V
-55 to +150
°
C
300 (0.063 in. (1.6mm) from case)
10 lbf
in (1.1 N
m)
Absolute Maximum Ratings
W
Benefits
Simplified assembly
Highest efficiency and power density
HEXFRED
TM
antiparallel Diode minimizes
switching losses and EMI
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| IRG4BAC50W-S | 功能描述:DIODE IGBT 600V SUPER 220 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IRG4BAC50W-SPBF | 功能描述:IGBT N-CHAN 600V 55A SUPER220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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