參數(shù)資料
型號(hào): IRFY340
廠(chǎng)商: SEMELAB LTD
元件分類(lèi): JFETs
英文描述: Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):30A; Gate Trigger Current (QI), Igt:50mA; Current, It av:30A; Forward Current:30A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
中文描述: 6.9 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 14K
代理商: IRFY340
IRFY340
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/98
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
T
J
, T
stg
T
L
R
θ
JC
±20V
6.9A
4.4A
27A
60W
0.48W/°C
–55 to 150°C
300°C
2.1°C/W max.
MECHANICAL DATA
Dimensions in mm (inches)
1
1
1
1
1
1
1
1
2.54
BSC
10.41
10.67
3.56
0.70
0.90
2.65
2.75
0.89
1.14
4.70
5.00
1 2 3
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
TO–220M – Metal Package
Notes
1) Pulse Test: Pulse Width
300ms,
δ ≤
2%
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
FEATURES
HERMETICALLY SEALED TO–220 METAL
PACKAGE
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
SCREENING OPTIONS AVAILABLE
ALL LEADS ISOLATED FROM CASE
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
400V
6.9A
0.55
相關(guān)PDF資料
PDF描述
IRFY430M Publications, Books RoHS Compliant: NA
IRFY430M-T257 Publications, Books RoHS Compliant: NA
IRFY430 Publications, Books RoHS Compliant: NA
IRFY440 N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
IRFY440CM POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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