參數(shù)資料
型號: IRFY430
廠商: SEMELAB LTD
元件分類: JFETs
英文描述: Publications, Books RoHS Compliant: NA
中文描述: 3.7 A, 500 V, 1.84 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 1/2頁
文件大?。?/td> 18K
代理商: IRFY430
IRFY430
M
IRFY430M
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
T
J
, T
stg
T
L
R
q
JC
±20V
3.7A
2.4A
14A
45W
0.36W/°C
–55 to 150°C
300°C
1.67°C/W max.
MECHANICAL DATA
Dimensions in mm (inches)
1
1
1
1
1
1
1
1
2.54
BSC
10.41
10.67
3.56
0.70
0.90
2.65
2.75
0.89
1.14
4.70
5.00
1 2 3
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
TO–220M – Metal Package
Notes
1) Pulse Test: Pulse Width
300ms,
d £
2%
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
FEATURES
HERMETICALLY SEALED TO–220 METAL
PACKAGE
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
SCREENING OPTIONS AVAILABLE
ALL LEADS ISOLATED FROM CASE
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
V
DSS
I
D(cont)
R
DS(on)
500V
3.7A
1.6
W
IRFY430
IRFY430M
相關PDF資料
PDF描述
IRFY440 N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
IRFY440CM POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A)
IRFY9130 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
IRFY9130CM POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A)
IRFY9140C P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
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