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參數(shù)資料
| 型號： | IRFY230 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS |
| 中文描述： | 9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | IRFY230 |
IRFY230
Document Number 3279
Issue1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukMECHANICAL DATA
Dimensions in mm (inches)
1 2 3
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
1
1
1
1
1
1
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
1
1
Dia.
TO–257AA – Metal Package
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
FEATURES
HERMETICALLY SEALED TO–257AA
METAL PACKAGE
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
SCREENING OPTIONS AVAILABLE
ALL LEADS ISOLATED FROM CASE
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
V
DSS
I
D(cont)
R
DS(on)
200V
9A
0.40
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
T
J
, T
stg
R
θ
JC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
±20V
9A
6A
36A
75W
0.6W/°C
–55 to 150°C
1.67°C/W max..
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFY240 | N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
| IRFY240CM | POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A) |
| IRFY340 | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):30A; Gate Trigger Current (QI), Igt:50mA; Current, It av:30A; Forward Current:30A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes |
| IRFY430M | Publications, Books RoHS Compliant: NA |
| IRFY430M-T257 | Publications, Books RoHS Compliant: NA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFY230C | 制造商:International Rectifier 功能描述:HEXFET, HI-REL - Bulk |
| IRFY230CM | 制造商:International Rectifier 功能描述:HEXFET, HI-REL - Bulk |
| IRFY230M | 制造商:International Rectifier 功能描述:HEXFET, HI-REL - Bulk |
| IRFY230SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | CHIP |
| IRFY240 | 制造商:International Rectifier 功能描述:HEXFET, HI-REL - Bulk |
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