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參數(shù)資料
| 型號： | IRFY140C |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 160K |
| 代理商： | IRFY140C |
IRFY140C, IRFY140CM
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.1
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.077
VGS = 10V, ID = 16A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
9.1
—
S ( )VDS > 15V, IDS = 16A
IDSS
Zero Gate Voltage Drain Current
—
25
VDS= 80V ,VGS=0V
—
250
VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
59
VGS =10V, ID = 16A
Qgs
Gate-to-Source Charge
—
12
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
30.7
td(on)
Turn-On Delay Time
—
21
VDD = 50V, ID = 16A,
tr
Rise Time
—
145
RG = 9.1
td(off)
Turn-Off Delay Time
—
64
tf
Fall Time
—
105
LS + LD
Total Inductance
—
6.8
—
Ciss
Input Capacitance
—
1660
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
550
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
120
—
nA
nH
ns
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
1.25
RthCS
Case-to-sink
—
0.21
—
RthJA
Junction-to-Ambient
—
80
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
16
ISM
Pulse Source Current (Body Diode)
—
100
VSD
Diode Forward Voltage
—
1.5
V
Tj = 25°C, IS = 16A, VGS = 0V
trr
Reverse Recovery Time
—
400
nS
Tj = 25°C, IF = 16A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
2.4
C
VDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFY140CM | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk 制造商:International Rectifier 功能描述:100V, 16A, 0.077 ohm HEXFET |
| IRFY140CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk |
| IRFY140CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk |
| IRFY140CSC | 制造商:International Rectifier 功能描述: |
| IRFY140CSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk |
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