參數(shù)資料
型號: IRFY140C
元件分類: JFETs
英文描述: 16 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
文件頁數(shù): 1/7頁
文件大小: 160K
代理商: IRFY140C
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
16*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
16*
IDM
Pulsed Drain Current
64
PD @ TC = 25°C
Max. Power Dissipation
100
W
Linear Derating Factor
0.8
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
230
mJ
IAR
Avalanche Current
16*
A
EAR
Repetitive Avalanche Energy
10
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300(0.063in./1.6mm from case for 10 sec)
Weight
4.3 (Typical)
g
PD - 91287C
HEXFET MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required.
The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
oC
A
POWER MOSFET
THRU-HOLE (TO-257AA)
4/18/01
www.irf.com
1
100V, N-CHANNEL
HEXFET
MOSFET TECHNOLOGY
TO-257AA
Product Summary
Part Number
RDS(on)
ID
Eyelets
IRFY140C
0.077
16*A
Ceramic
IRFY140CM
0.077
16*A
Ceramic
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
n Ideally Suited For Space Level
Applications
For footnotes refer to the last page
IRFY140C,IRFY140CM
* Current is limited by pin diameter
相關(guān)PDF資料
PDF描述
IRFZ32 25 A, 50 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFZ44VZ 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRG4BC20MD-S 18 A, 600 V, N-CHANNEL IGBT
IRG4RC20FPBF 22 A, 600 V, N-CHANNEL IGBT, TO-252AA
IRGDDN400M12 400 A, 1200 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFY140CM 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk 制造商:International Rectifier 功能描述:100V, 16A, 0.077 ohm HEXFET
IRFY140CMSCV 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk
IRFY140CMSCX 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk
IRFY140CSC 制造商:International Rectifier 功能描述:
IRFY140CSCV 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk