參數(shù)資料
型號(hào)： IRFW550A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： Advanced Power MOSFET
中文描述： 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： D2PAK-3
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 266K
代理商： IRFW550A
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
Operating Temperature
Lower Leakage Current : 10 A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.032 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
JC
R
JA
R
JA
θ
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
)
Characteristic
Value
100
40
28.3
160
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
A
*
O
1
O
O
1
O
1
2
O
3
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
θ
θ
Ο
C
IRFW/I550A
BV
DSS
= 100 V
R
DS(on)
= 0.04
I
D
= 40 A
640
40
16.7
6.5
3.8
167
1.11
- 55 to +175
300
0.9
40
62.5
--
--
--
2
0
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料
PDF描述
IRFI550A Advanced Power MOSFET
IRFWI550A Advanced Power MOSFET
IRFW630 200V N-Channel MOSFET
IRFI630 Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
IRFI630G Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFW550ATM 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFW610A 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263AB
IRFW610B 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
IRFW610BTM 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFW610BTM_FP001 功能描述:MOSFET 200V N-Ch B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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