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參數(shù)資料
| 型號： | IRFI630G |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.40ohm，身份證\u003d 5.9A） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 648K |
| 代理商： | IRFI630G |
2002 Fairchild Semiconductor Corporation
Rev. C, December 2002
I
IRFW630B / IRFI630B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
9.0A, 200V, R
DS(on)
= 0.4
@V
GS
= 10 V
Low gate charge ( typical 22 nC)
Low Crss ( typical 22 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFW630B / IRFI630B
200
9.0
5.7
36
±
30
160
9.0
7.2
5.5
3.13
72
0.57
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
stg
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
1.74
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
●
●
●
●
●
▲
!
S
!
!
!
D
G
D
2
-PAK
IRFW Series
I
2
-PAK
IRFI Series
G
S
D
G
S
D
相關PDF資料 |
PDF描述 |
|---|---|
| IRFI630 | 200V N-Channel MOSFET |
| IRFW630B | 200V N-Channel MOSFET |
| IRFI630B | 200V N-Channel MOSFET |
| IRFW634B | 250V N-Channel MOSFET |
| IRFI634 | 250V N-Channel MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFI630GPBF | 功能描述:MOSFET N-Chan 200V 5.9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFI634 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| IRFI634A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8.1A I(D) | TO-262AA |
| IRFI634B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| IRFI634BTU_FP001 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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