參數(shù)資料
型號： IRFU220NPBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/10頁
文件大小： 233K
代理商： IRFU220NPBF
2
www.irf.com
Parameter
Min. Typ. Max. Units
2.6
–––
–––
15
–––
2.4
–––
6.1
–––
6.4
–––
11
–––
20
–––
12
–––
300
–––
53
–––
15
–––
300
–––
23
–––
46
Conditions
V
DS
= 50V, I
D
= 2.9A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
23 I
D
= 2.9A
3.6
nC
9.2
–––
–––
–––
–––
–––
–––
–––
pF
–––
–––
–––
S
V
DS
= 160V
V
GS
= 10V,
V
DD
= 100V
I
D
= 2.9A
R
G
= 24
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 160V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 160V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
46
2.9
4.3
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.9A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.9A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
90
320
1.3
140
480
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
5.0
20
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.23 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
2.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
200
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
–––
–––
–––
–––
–––
600
4.0
25
250
100
-100
m
V
V
GS
= 10V, I
D
= 2.9A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
–––
–––
–––
Max.
3.5
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
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相關代理商/技術參數(shù)
參數(shù)描述
IRFU220PBF 功能描述:MOSFET N-Chan 200V 4.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU220S2497 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFU221 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFU222 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFU224 功能描述:MOSFET N-Chan 250V 3.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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