參數(shù)資料
型號(hào): IRFSL38N20D
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 200V的電壓,的Rds(on)最大值\u003d 0.054ohm,身份證\u003d 44A條)
文件頁數(shù): 4/11頁
文件大?。?/td> 133K
代理商: IRFSL38N20D
IRFB/IRFS/IRFSL38N20D
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
100000
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
16
32
48
64
80
0
2
5
7
10
12
Q , Total Gate Charge (nC)
V
G
I
=
D
26A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
IS
TJ = 25
°
C
TJ = 175
°
C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25
°
C
Tj = 175
°
C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
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