參數(shù)資料
型號(hào)： IRFS740B
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 400V N-Channel MOSFET
中文描述： 10 A, 400 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 894K
代理商： IRFS740B
2001 Fairchild Semiconductor Corporation
November 2001
Rev. A, November 2001
I
IRF740B/IRFS740B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
Features
10A, 400V, R
DS(on)
= 0.54
@V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRF740B
IRFS740B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
400
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
10
6.3
40
10 *
6.3 *
40 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
450
10
13.4
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
134
1.08
44
0.35
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
IRF740B
0.93
0.5
62.5
IRFS740B
2.86
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFS740BT 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS741 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220VAR
IRFS742 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220VAR
IRFS743 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-220VAR
IRFS7434-7PPBF 制造商:International Rectifier 功能描述:MOSFET, 40V, 240A, 1.0 MOHM, 210 NC QG, D2-7PIN - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N-CH 40V 240A D2PAK-7
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