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參數(shù)資料
| 型號(hào)： | IRFS640B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 916K |
| 代理商： | IRFS640B |
2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
I
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100
μ
s
1 ms
DC
100 ms
10 ms
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
4
8
12
16
20
I
D
,
T
C
, Case Temperature [
℃
]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※
Notes :
1. V
= 10 V
2. I
D
= 9.0 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9-1. Maximum Safe Operating Area
for IRF640B
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for IRFS640B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS640B_FP001 | 功能描述:MOSFET TO-220 ISO N-CH 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS640BT_FP001 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS641 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Improved inductive ruggedness |
| IRFS644 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8.5A I(D) | TO-220VAR |
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