- 您現(xiàn)在的位置：買賣IC網 > PDF目錄378638 > IRFS510 (Fairchild Semiconductor Corporation) Advanced Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRFS510 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進的功率MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 253K |
| 代理商： | IRFS510 |
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/ T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
I
D
=250
V
DS
=5V,I
D
=250
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V,T
C
=150
A
A
See Fig 7
μ
A
V
GS
=10V,I
D
=2.25A
V
DS
=40V,I
D
=2.25A
V
DD
=50V,I
D
=5.6A,
R
G
=24
See Fig 13
V
DS
=80V,V
GS
=10V,
I
D
=5.6A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
μ
Integral reverse pn-diode
in the MOSFET
T
J
=25 ,I
S
=4.5A,V
GS
=0V
T
J
=25 ,I
F
=5.6A
di
F
/dt=100A/ s
Ο
C
μ
O
4
O
5
Ο
C
μ
Ο
C
O
4
O
4
O
5
O
4
O
4
O
4
O
1
Ο
C
Ο
C
μ
IRFS510A
100
--
2.0
--
--
--
--
--
0.11
--
--
--
--
--
55
21
10
14
28
18
8.5
1.6
4.1
--
--
4.0
100
-100
10
100
0.4
--
240
65
25
30
40
70
50
12
--
--
3.29
190
--
--
--
85
0.23
4.5
20
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=4mH, I
AS
=5.6A, V
DD
=25V, R
G
=27
I
SD
5.6A, di/dt 250A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
, Starting T
J
=25
O
1
O
O
3
O
2
4
o
C
o
C
相關PDF資料 |
PDF描述 |
|---|---|
| IRFS510A | Advanced Power MOSFET |
| IRFS520A | Advanced Power MOSFET |
| IRFS530 | Advanced Power MOSFET |
| IRFS530A | Advanced Power MOSFET |
| IRFS540A | Advanced Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS510A | 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS520 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7.2A I(D) | SOT-186 |
| IRFS520A | 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS521 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 7.2A I(D) | SOT-186 |
| IRFS52N15D | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) |
發(fā)布緊急采購，3分鐘左右您將得到回復。