參數(shù)資料
型號(hào)： IRFS4321PBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 368K
代理商： IRFS4321PBF
www.irf.com
1
PD - 97034
HEXFET
Power MOSFET
Features of this design are a 150°C junction oper-
ating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
Description
O
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters Are Differrent from
IRF4905S
Lead-Free
O
O
O
O
O
O
Features
IRF4905SPbF
IRF4905LPbF
V
DSS
= -55V
R
DS(on)
= 20m
I
D
= -42A
D
2
Pak
IRF4905SPbF
TO-262
IRF4905LPbF
S
D
G
D
S
D
G
D
G
D
S
Gate
Drain
Source
S
D
G
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady state)
-55 to + 150
300 (1.6mm from case )
10 lbf in (1.1N m)
170
1.3
± 20
140
Max.
-70
-44
-42
-280
790
See Fig.12a, 12b, 15, 16
相關(guān)PDF資料
PDF描述
IRFSL4321PBF HEXFET Power MOSFET
IRF4905L Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)
IRF4905S Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)
IRF4905SPBF HEXFET Power MOSFET
IRF4905 Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)
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