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參數(shù)資料
| 型號： | IRFS4321PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 368K |
| 代理商： | IRFS4321PBF |
2
www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
-55
Typ. Max. Units
–––
–––
(BR)DSS
V
(BR)DSS
/
T
J
R
DS(on)
V
GS(th)
gfs
Drain-to-Source Breakdown Voltage
V
Breakdown Voltage Temp. Coefficient
–––
-0.054
–––
V/°C
m
Static Drain-to-Source On-Resistance
–––
–––
20
Gate Threshold Voltage
-2.0
–––
-4.0
V
Forward Transconductance
19
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
-25
μA
–––
–––
-200
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
Total Gate Charge
–––
120
180
Gate-to-Source Charge
–––
32
–––
nC
Gate-to-Drain ("Miller") Charge
–––
53
–––
Turn-On Delay Time
–––
20
–––
Rise Time
–––
99
–––
Turn-Off Delay Time
–––
51
–––
ns
Fall Time
–––
64
–––
Internal Source Inductance
–––
7.5
–––
nH
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
–––
3500
–––
Output Capacitance
–––
1250
–––
Reverse Transfer Capacitance
–––
450
–––
pF
Output Capacitance
–––
4620
–––
Output Capacitance
–––
940
–––
Effective Output Capacitance
–––
1530
–––
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
Min.
–––
Typ. Max. Units
–––
-42
A
I
SM
Pulsed Source Current
–––
–––
-280
(Body Diode)
V
SD
t
rr
Q
rr
t
on
Diode Forward Voltage
–––
–––
-1.3
V
Reverse Recovery Time
–––
61
92
ns
Reverse Recovery Charge
–––
150
220
nC
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= -25V, I
D
= -42A
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 125°C
I
D
= -42A
V
DS
= -44V
V
GS
= -10V
V
DD
= -28V
I
D
= -42A
R
G
= 2.6
Conditions
V
GS
= -10V
V
GS
= -20V
V
GS
= 20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -42A, V
GS
= 0V
T
J
= 25°C, I
F
= -42A, V
DD
= -28V
di/dt = -100A/μs
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -42A
V
DS
= V
GS
, I
D
= -250μA
V
GS
= 0V, V
DS
= -1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= -44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to -44V
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