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參數(shù)資料
| 型號： | IRFR9120 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P溝道功率MOS場效應管) |
| 中文描述： | 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 7/7頁 |
| 文件大小： | 73K |
| 代理商： | IRFR9120 |
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IRFR9120, IRFU9120
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR9120_R4941 | 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR91209A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.6A I(D) | TO-252AA |
| IRFR91209AR3603 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR9120N | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK 制造商:International Rectifier 功能描述:MOSFET P D-PAK |
| IRFR9120NCPBF | 功能描述:MOSFET P-CH 100V 6.6A DPAK RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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