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參數資料
| 型號： | IRFR220 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4.6A, 200V, 0.800 Ohm,N-Channel PowerMOSFET(4.6A, 200V, 0.800 Ω,nN溝道增強型功率MOS場效應管) |
| 中文描述： | 4.6 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數： | 7/7頁 |
| 文件大小： | 55K |
| 代理商： | IRFR220 |
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IRFR220, IRFU220
相關PDF資料 |
PDF描述 |
|---|---|
| IRFU220 | 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
| IRFR420 | 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs(2.5A, 500V, 3.000 Ω, N溝道功率MOS場效應管) |
| IRFU420 | 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs |
| IRFU420 | Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A) |
| IRFU9120 | 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P溝道功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR220,118 | 功能描述:MOSFET N-CH 200V 4.8A SOT428 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:TrenchMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFR220_R4941 | 功能描述:MOSFET TO-252AA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR220119 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR2209A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR2209AS2463 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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