參數(shù)資料
型號(hào)： IRFP450
廠(chǎng)商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET(14A, 500V, 0.400Ω, N溝道MOS場(chǎng)效應(yīng)管)
中文描述： 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 55K
代理商： IRFP450
4-355
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
-
-
14
A
Pulse Source to Drain Current (Note 3)
-
-
56
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 14A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 13A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= 13A, dI
SD
/dt = 100A/
μ
s
-
-
1.4
V
Reverse Recovery Time
-
1300
-
ns
Reverse Recovery Charge
-
7.4
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 7.9mH, R
G
= 25
, peak I
AS
= 14A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
15
12
9
6
3
1
0.1
10
-3
10
-5
10
-4
10
-3
10
-2
0.1
1
10
Z
θ
J
,
t
1
, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
t
1
t
2
0.1
0.02
0.01
0.2
0.5
0.05
10
-2
IRFP450
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP450_R4943 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450A 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450A_R4944 功能描述:MOSFET TO-3P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450APBF 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450B 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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