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參數(shù)資料
| 型號： | IRFP360 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel EnhancementMode MegaMOSFET(最大漏源擊穿電壓400V,導(dǎo)通電阻0.20Ω的N溝道增強型MegaMOSFET) |
| 中文描述： | 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | IRFP360 |
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 14 A, pulse test
14
S
C
iss
C
oss
C
rss
4500
1100
490
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 4.3
(External)
24
33
100
30
ns
ns
ns
ns
Q
g(on)
Q
gs
Q
gd
210
30
110
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
thJC
R
thCK
0.45
K/W
K/W
0.25
Source-Drain Diode
Ratings and Characteristics
(T
J
= 25°C unless otherwise specified)
Min.
Symbol
Test Conditions
Typ.
Max.
I
S
V
GS
= 0
23
A
I
SM
Repetitive; pulse width limited by T
JM
92
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300 μs, duty cycle d
≤
2 %
1.8
V
t
rr
Q
rr
I
F
= I
S
, -di/dt = 100 A/μs
420
630
ns
5.6
8.4
μC
IRFP 360
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP360LC | 功能描述:MOSFET N-Chan 400V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP360LCPBF | 功能描述:MOSFET N-Chan 400V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP360PBF | 功能描述:MOSFET N-Chan 400V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP360PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFP362 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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