參數(shù)資料
型號： IRFP247
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
中文描述： 14 A, 275 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/7頁
文件大?。?/td> 68K
代理商： IRFP247
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP244
250
250
15
9.7
60
±
20
150
1.2
550
-55 to 150
IRFP245
250
250
14
8.8
56
±
20
150
1.2
550
-55 to 150
IRFP246
275
275
15
9.7
60
±
20
150
1.2
550
-55 to 150
IRFP247
275
275
14
8.8
56
±
20
150
1.2
550
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
300
260
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A (Figure 10)
IRFP244, IRFP245
250
-
-
V
IRFP246, IRFP247
275
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 125
o
C
-
-
250
μ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
(Figure 7)
IRFP244, IRFP246
15
-
-
A
IRFP245, IRFP247
14
-
-
A
Gate to Source Leakage
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 10A (Figures 8, 9)
IRFP244, IRFP246
-
0.20
0.28
IRFP245, IRFP247
-
0.24
0.34
Forward Transconductance (Note 2)
g
fs
V
DS
≥
50V, I
D
= 10A (Figure 12)
6.7
11
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 125V, I
D
≈
15A, R
G
= 9.1
, V
GS
= 10V,
R
L
= 8
(Figures 17, 18) MOSFET Switching
Times are Essentially Independent of
Operating Temperature
-
16
24
ns
Rise Time
t
r
-
67
100
ns
Turn-Off Delay Time
t
d(OFF)
-
53
80
ns
Fall Time
t
f
-
49
74
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 15A, V
DS
= 0.8 x Rated
BV
DSS
, I
G(REF)
= 1.5mA (Figures 14, 19, 20)
Gate charge is Essentially Independent of
Operating Temperature
-
39
59
nC
Gate to Source Charge
Q
gs
-
6.6
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
20
-
nC
IRFP244, IRFP245, IRFP246, IRFP247
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IRFP250B 制造商:Fairchild Semiconductor Corporation 功能描述:
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