參數(shù)資料
型號(hào): IRFP23N50L
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 500V及的Rds(on)\u003d 0.190ohm,身份證\u003d 23A條)
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 104K
代理商: IRFP23N50L
IRFP23N50L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
100000
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
24
48
72
96
120
0
2
5
7
10
12
Q , Total Gate Charge (nC)
V
G
I
=
D
23
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
IS
TJ = 25
°
C
TJ = 150
°
C
VGS = 0V
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