參數(shù)資料
型號(hào)： IRFP23N50L
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）\u003d 0.190ohm，身份證\u003d 23A條）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 104K
代理商： IRFP23N50L
IRFP23N50L
2
www.irf.com
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Min. Typ. Max. Units
12
–––
–––
–––
–––
–––
–––
–––
–––
26
–––
94
–––
53
–––
45
–––
3600
–––
–––
380
–––
37
–––
4800
–––
–––
100
–––
220
Conditions
V
DS
= 50V, I
D
= 14A
I
D
= 23A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 23A
R
G
= 6.0
V
GS
= 10V,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 400V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
150
44
72
–––
–––
–––
–––
S
nC
–––
–––
pF
–––
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
500
–––
–––
0.27
–––
0.190 0.235
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 14A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
V
V/
°
C
V
5.0
50
2
100
-100
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Static @ T
J
= 25
°
C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
J
= 25
°
C, L = 1.5mH, R
G
= 25
,
I
AS
= 23A, dv/dt = 14V/ns (See Figure 12a)
I
SD
≤
23A, di/dt
≤
430A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Parameter
Typ.
–––
–––
–––
Max.
410
23
37
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ.
–––
0.24
–––
Max.
0.34
–––
40
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
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