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參數(shù)資料
| 型號(hào)： | IRFMG40U |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-254VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 1KV交五（巴西）直| 3.9AI（四）|對(duì)254VAR |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 475K |
| 代理商： | IRFMG40U |
IRFMG40
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
1000
—
Typ
—
1.4
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
3.3
—
—
—
—
—
—
—
—
3.5
4.2
4.0
—
25
250
VGS = 10V, ID = 2.5A
VGS = 10V, ID = 3.9A
VDS = VGS, ID = 250μA
VDS > 15V, IDS = 2.5A
VDS= 800V ,VGS=0V
VDS = 800V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID =3.9A
VDS = 400V
|
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
120
12
75
30
50
170
50
—
nC
VDD = 400V, ID = 3.9A,
VGS =10V,RG = 9.1
|
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1700
250
100
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
—
—
—
—
0.21
—
1.0
—
48
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
3.9
16
1.8
1000
5.6
V
nS
μC
T
j
= 25°C, IS = 3.9A, VGS = 0V
Tj = 25°C, IF = 3.9A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
Note: Corresponding Spice and Saber models are available on the G&S Website.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFMG50 | 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 1KV 5.6A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:MOSFET, Current Rating:5.6A, Leaded Process Compatible:No, Package / Case:TO-254 |
| IRFMG50/RESCREEN/REMARK/LABARG | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 1KV 5.6A 3PIN TO-254AA - Bulk |
| IRFMG50D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5.6A I(D) | TO-254VAR |
| IRFMG50SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 1KV 5.6A 3PIN TO-254AA - Bulk |
| IRFMG50SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 1KV 5.6A 3PIN TO-254AA - Bulk |
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