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參數(shù)資料
| 型號(hào)： | IRFN044SMD |
| 英文描述： | N-Channel Power MOSFET(Vdss:60V,Id(cont):34A,Rds(on):0.040Ω)(N溝道功率MOS場(chǎng)效應(yīng)管(Vdss:60V,Id(cont):34A,Rds(on):0.040Ω)) |
| 中文描述： | N溝道功率MOSFET（減振鋼板基本：60V的，身份證（續(xù)）：34A條的Rds（on）：0.040Ω）（不適用馬鞍山溝道功率場(chǎng)效應(yīng)管（減振鋼板基本：60V的，身份證（續(xù)）：34A條的Rds（on） ：0.040Ω）） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | IRFN044SMD |
IRFN044SMD
Prelim. 7/00
LA B
MECHANICAL DATA
S E M E
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukV
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
E
AS
dv/dt
T
J
, T
stg
T
L
R
q
JC
R
q
J–PCB
±20V
34A
21A
136A
75W
0.6W/°C
340mJ
4.5V/ns
–55 to 150°C
300°C
1.67°C/W
4°C/W
N–CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
FEATURES
HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
HIGH PACKING DENSITIES
SMD1
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
Note:
IRFxxxSM also available with
pins 1 and 3 reversed.
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) @ V
DD
= 25V , L
3
0.3mH , R
G
= 25
W
, Peak I
L
= 34A , Starting T
J
= 25°C
3) @ I
SD
￡
34A , di/dt
￡
100A/
m
s , V
DD
￡
BV
DSS
, T
J
￡
150°C , SUGGESTED R
G
= 9.1
W
V
DSS
I
D(cont)
R
DS(on)
60V
34A
0.040
W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFN044 | POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A) |
| IRFN044SMD | N-CHANNEL POWER MOSFET |
| IRFN054SMD | N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N溝道功率MOS場(chǎng)效應(yīng)管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) |
| IRFN054 | POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*) |
| IRFN054SMD | N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFN054 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 55A 3-Pin SMD-1 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 55A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:Single N-Channel 60 V 150 W 160 nC Hexfet Power Mosfet Surface Mount - SMD-1 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 60V, 55A, SMD-1; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| IRFN054SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 55A 3SMD-1 - Bulk |
| IRFN054SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 55A 3SMD-1 - Bulk |
| IRFN054SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| IRFN130SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
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