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參數(shù)資料
| 型號(hào)： | IRFG5110PBF |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB |
| 封裝： | HERMETIC SEALED, MO-036AB, 14 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 394K |
| 代理商： | IRFG5110PBF |
IRFG5110
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
1.0
ISM
Pulse Source Current (Body Diode)
—
4.0
VSD
Diode Forward Voltage
—
1.5
V
Tj = 25°C, IS = 1.0A, VGS = 0V
trr
Reverse Recovery Time
—
200
nS
Tj = 25°C, IF = 1.0A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
0.83
nC
VDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.13
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.7
VGS = 10V, ID = 0.6A
Resistance
—
0.8
VGS = 10V, ID = 1.0A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
0.86
—
S ( )VDS > 15V, IDS = 0.6A
IDSS
Zero Gate Voltage Drain Current
—
25
VDS= 80V, VGS= 0V
—
250
VDS = 80V,
VGS = 0V, TJ =125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
15
VGS =10V, ID = 1.0A,
Qgs
Gate-to-Source Charge
—
7.5
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
7.5
td(on)
Turn-On Delay Time
—
20
VDD = 50V, ID = 1.0A,
tr
Rise Time
—
25
VGS =10V, RG = 24
td(off)
Turn-Off Delay Time
—
40
tf
Fall Time
—
40
LS + LD
Total Inductance
—
10
—
Ciss
Input Capacitance
—
180
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
82
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
15
—
nA
nH
ns
A
Thermal Resistance (Per Die)
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
17
RthJA
Junction-to-Ambient
—
90
Typical socket mount
°C/W
—
Note: Corresponding Spice and Saber models are available on the G&S Website.
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
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相關(guān)代理商/技術(shù)參數(shù) |
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| IRFG5110SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 1A 14PIN MO-036AB - Bulk |
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| IRFG5210SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 200V 0.68A 14PIN MO-036AB - Bulk |
| IRFG5210SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 200V 0.68A 14PIN MO-036AB - Bulk |
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