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參數(shù)資料
| 型號(hào)： | IRFG5110PBF |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB |
| 封裝： | HERMETIC SEALED, MO-036AB, 14 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 394K |
| 代理商： | IRFG5110PBF |
Absolute Maximum Ratings (Per Die)
Parameter
N-Channel
P-Channel
Units
ID @ VGS =± 10V, TC = 25°C Continuous Drain Current
1.0
-1.0
ID @ VGS =± 10V, TC = 100°C Continuous Drain Current
0.6
-0.6
IDM
Pulsed Drain Current
4.0
-4.0
PD @ TC = 25°C
Max. Power Dissipation
1.4
W
Linear Derating Factor
0.011
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
75
mJ
IAR
Avalanche Current
——
A
EAR
Repetitive Avalanche Energy
——
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
-5.5
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.63 in./1.6 mm from case for 10s)
Weight
1.3 (Typical)
g
oC
A
04/16/02
www.irf.com
1
Product Summary
Part Number
RDS(on)
ID
CHANNEL
IRFG5110
0.7
1.0A
N
IRFG5110
0.7
-1.0A
P
For footnotes refer to the last page
MO-036AB
PD - 90437D
IRFG5110
100V, Combination 2N-2P-CHANNEL
HEXFET
MOSFETTECHNOLOGY
POWER MOSFET
THRU-HOLE (MO-036AB)
HEXFET MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFG5110SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 1A 14PIN MO-036AB - Bulk |
| IRFG5110SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 1A 14PIN MO-036AB - Bulk |
| IRFG5210 | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 200V 0.68A 14PIN MO-036AB - Bulk |
| IRFG5210SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 200V 0.68A 14PIN MO-036AB - Bulk |
| IRFG5210SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 200V 0.68A 14PIN MO-036AB - Bulk |
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