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參數(shù)資料
| 型號： | IRFF220 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.5A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(3.5A, 200V, 0.800 Ohm,N溝道增強型功率MOS場效應管) |
| 中文描述： | 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 325K |
| 代理商： | IRFF220 |
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1.0
0.1
0.05
1000
1
10
100
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
DC
1ms
10ms
100ms
100
μ
s
10
μ
s
10
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
40
60
80
0
100
10
8
6
0
4
I
D
,
80
μ
s PULSE TEST
2
10V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
0
10
5
4
3
0
2
I
D
,
V
GS
= 5V
80
μ
s PULSE TEST
1
8V
V
GS
= 4V
V
GS
= 6V
V
GS
= 10V
V
DS
> I
D(ON)
x r
DS(ON)
MAX
80
μ
s PULSE TEST
T
J
= 125
o
C
T
J
= -25
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
6
2
0
0
2
4
6
8
10
4
8
T
J
= -55
o
C
I
D
, DRAIN CURRENT (A)
5
0
10
1.5
1.0
r
D
0.5
V
GS
= 10V
15
20
V
GS
= 20V
T
J
= 25
o
C
CURRENT PULSE 2
μ
s
O
)
1.4
0.6
0
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 2A
V
GS
= 10V
2.2
1.0
0.2
-40
40
80
120
1.8
O
IRFF220
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF220 | 制造商:International Rectifier 功能描述:TRANSISTOR |
| IRFF220R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF221 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFF221R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF222 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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