參數(shù)資料
型號: IRFF220
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 3.5A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(3.5A, 200V, 0.800 Ohm,N溝道增強型功率MOS場效應管)
中文描述: 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 3/7頁
文件大?。?/td> 325K
代理商: IRFF220
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
-
-
3.5
A
Pulse Source to Drain Current (Note 3)
-
-
14
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 3.5A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 3.5A, dI
SD
/d
t
= 100A/
μ
s
T
J
= 150
o
C, I
SD
= 3.5A, dI
SD
/d
t
= 100A/
μ
s
-
-
2.0
V
Reverse Recovery Time
-
350
-
ns
Reverse Recovered Charge
-
2.3
-
μ
C
NOTES:
2. Pulse test: pulse width
300
μ
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 20V, start T
J
= 25
o
C, L = 12.5mH, R
G
= 50
,
peak I
AS
= 3.5A (Figures 15, 16).
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
D
S
G
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50
75
100
25
150
5
4
3
0
2
I
D
,
1
125
Z
θ
J
N
2
1.0
0.1
0.01
10
-2
10
-5
10
-4
10
-3
0.1
1
10
t
1
, SQUARE WAVE PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
T
0.01
0.02
0.05
0.1
0.2
0.5
IRFF220
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