參數(shù)資料
型號(hào): IRFD014
廠商: VISHAY SILICONIX
元件分類: JFETs
英文描述: 1.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: HVMDIP-4
文件頁(yè)數(shù): 7/9頁(yè)
文件大?。?/td> 2019K
代理商: IRFD014
Document Number: 91125
www.vishay.com
S10-2466-Rev. C, 25-Oct-10
7
IRFD014, SiHFD014
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91128.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS = 10 V
a
I
SD
Driver gate drive
D.U.T. l
SD waveform
D.U.T. V
DS waveform
Inductor current
D =
P.W.
Period
+
-
+
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
dV/dt controlled by R
g
Driver same type as D.U.T.
I
SD controlled by duty factor “D”
D.U.T. - device under test
D.U.T.
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
R
g
Note
a. V
GS = 5 V for logic level devices
V
DD
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