- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄378638 > IRFD010PBF (VISHAY SEMICONDUCTORS) MOSFET N-CH 50V 1.7A 4-DIP PDF資料下載
參數(shù)資料
| 型號(hào)： | IRFD010PBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 保險(xiǎn)絲支架，夾子&硬件 |
| 英文描述： | MOSFET N-CH 50V 1.7A 4-DIP |
| 中文描述： | RF MOSFET Small Signal N-Chan 50V 1.7 Amp |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | IRFD010PBF |
IRF
www.vishay.com
Vishay Dale
Revision: 17-Oct-11
3
Document Number: 34055
For technical questions, contact:
magnetics@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
IRF-3
Notes
(1)
Measured with full length lead
(2)
Rated DC current based on maximum temperature rise of 15 °C at + 90 °C ambient
47.0
56.0
68.0
82.0
100.0
120.0
150.0
180.0
220.0
270.0
330.0
390.0
470.0
560.0
680.0
820.0
1000.0
± 10
± 10
± 10
± 10
± 10
± 10
± 10
± 10
± 10
± 10
± 10
± 10
± 10
± 10
± 10
± 10
± 10
45
40
40
35
30
70
70
70
70
70
70
65
65
65
65
65
65
2.5
2.5
2.5
2.5
2.5
0.79
0.79
0.79
0.79
0.79
0.79
0.79
0.79
0.79
0.79
0.79
0.79
13.0
12.0
11.0
10.3
9.5
3.8
3.5
3.3
3.0
2.8
2.6
2.4
2.25
2.1
1.95
1.85
1.4
1.22
1.34
1.47
1.62
1.8
3.7
4.2
4.6
5.1
5.8
6.4
7.0
7.7
8.5
9.4
10.5
14.0
340
320
305
290
275
185
175
165
155
145
137
133
126
120
113
105
100
ORDERING INFORMATION
IRF-1
10 μH
± 10 %
ER
e2
MODEL
INDUCTANCE VALUE
INDUCTANCE TOLERANCE
PACKAGE CODE
JEDEC LEAD (Pb)-FREE STANDARD
GLOBAL PART NUMBER
I
R
F
0
1
E
R
1
0
0
K
MODEL
PACKAGE
CODE
INDUCTANCE
VALUE
INDUCTANCE
TOLERANCE
STANDARD ELECTRICAL SPECIFICATIONS
IND.
(μH)
(%)
MODEL
TOL.
Q
MIN.
TEST FREQUENCY L AND Q
(MHz)
SRF MIN.
(MHz)
(1)
DCR MAX.
(
)
RATED DC CURRENT
(mA)
(2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFD020PBF | MOSFET N-CH 50V 2.4A 4-DIP |
| IRFW550A | Advanced Power MOSFET |
| IRFI550A | Advanced Power MOSFET |
| IRFWI550A | Advanced Power MOSFET |
| IRFW630 | 200V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFD012 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:HEXFET TRANSISTORS N-CHANNEL HEXDIP |
| IRFD014 | 功能描述:MOSFET N-Chan 60V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD014_10 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Power MOSFET |
| IRFD014PBF | 功能描述:MOSFET N-Chan 60V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD015 | 制造商:INT 功能描述:IRFD010 IR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。