參數(shù)資料
型號(hào): IRFBL12N50A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-263AA
中文描述: 晶體管| MOSFET的| N溝道| 500V五(巴西)直|第13A條(?。﹟對(duì)263AA
文件頁數(shù): 6/8頁
文件大?。?/td> 115K
代理商: IRFBL12N50A
IRFBL10N60A
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
D D
DRIVER
A
15V
20V
Fig 12d.
Typical Drain-to-Source Voltage
Vs. Avalanche Current
25
50
75
100
125
150
0
200
400
600
800
1000
Starting T , Junction Temperature ( C)
E
ID
4.9A
7.5A
11A
TOP
BOTTOM
640
660
680
700
720
740
0
2
4
6
8
10
12
A
D
I , Avalanche Current (A)
V
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參數(shù)描述
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