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參數(shù)資料
| 型號： | IRFC044 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 33K |
| 代理商： | IRFC044 |
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Guaranteed (Min/Max)
60V Min.
0.034
Max.
2.1V Min.
100μA Max.
± 10μA Max.
125°C Max.
Test Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage
Operating Junction and
Storage Temperature Range
V
GS
= 0V, I
D
= 100μA
V
GS
= 10V, I
D
= 5.0A
V
DS
= 5.0V, I
D
= 250μA
V
DS
= 60V, V
GS
= 0V, T
J
= 25°C
V
GS
= ±20V
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
99% Al, 1% Si (0.004mm)
0.170" x 0.180" ( 4.32mm x 4.57 mm)
125mm with 100 flat
0.375mm + / -0.020mm
01-5018
0.084 mm
0.51mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Recommended Die Attach Conditions
60 V
Size 4.0
Rds(on)=0.034
5" Wafer
3/23/99
Mechanical Data
Die Outline
Reference Standard IR packaged part ( for design ) : IRFZ44
Electrical Characteristics ( Wafer Form )
IRFC044
HEXFET
Power MOSFET Die in Wafer Form
S
D
G
PD- 91874
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFC044R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP |
| IRFC054B | 制造商:Vishay Semiconductors 功能描述:MOSFET N-CHANNEL 60V - Bulk |
| IRFC054R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP |
| IRFC064B | 制造商:Vishay Semiconductors 功能描述:MOSFET N-CHANNEL 60V - Bulk |
| IRFC110 | 制造商:Vishay Semiconductors 功能描述:MOSFET N-CHANNEL 100V - Bulk |
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