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參數(shù)資料
| 型號： | IRFBF20STRL |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 1.7A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 900V五（巴西）直| 1.7AI（四）|對263AB |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 347K |
| 代理商： | IRFBF20STRL |
IRFBF20S/L
HEXFET
Power MOSFET
PRELIMINARY
PD - 9.1665
Parameter
Typ.
–––
–––
Max.
2.3
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
1.7
1.1
6.8
3.1
54
0.43
± 20
180
1.7
5.4
1.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
V
DSS
= 900V
R
DS(on)
= 8.0
I
D
= 1.7A
D2
TO-262
S
D
G
7/10/97
l
Surface Mount (IRFBF20S)
l
Low-profile through-hole (IRFBF20L)
l
Available in Tape & Reel (IRFBF20S)
l
Dynamic dv/dt Rating
l
150°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
Pak is a surface mount power package capable of he accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D
2
Pak is suitable for high
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRFBF20L) is available for low-profile applications.
Description
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFBF20STRLPBF | 功能描述:MOSFET N-Chan 900V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBF20STRR | 功能描述:MOSFET N-Chan 900V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBF20STRRPBF | 功能描述:MOSFET N-Chan 900V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBF22 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 1.5A I(D) | TO-220AB |
| IRFBF30 | 功能描述:MOSFET N-Chan 900V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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