參數(shù)資料
型號(hào)： IRFB3507
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 413K
代理商： IRFB3507
2
www.irf.com
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.17mH,
R
G
= 25
, I
AS
= 58A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
58A, di/dt
≤
390A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
θ
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
75
–––
–––
0.070
–––
7.0
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
–––
–––
8.8
4.0
20
250
200
-200
–––
V
V/°C
m
V
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related) –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
nA
R
G
f = 1MHz, open drain
Min. Typ. Max. Units
86
–––
–––
88
–––
24
–––
36
–––
20
–––
81
–––
52
–––
49
–––
3540
–––
340
–––
210
460
–––
520
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
pF
Min. Typ. Max. Units
–––
–––
97
A
–––
–––
390
A
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
37
45
32
51
1.7
1.3
56
68
48
77
–––
V
ns
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 64V,
I
F
= 58A
di/dt = 100A/μs
Q
rr
Reverse Recovery Charge
nC
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
A
Conditions
V
DS
= 50V, I
D
= 58A
I
D
= 58A
V
DS
= 60V
V
GS
= 10V
V
DD
= 48V
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V , See Fig.11
V
GS
= 0V, V
DS
= 0V to 60V , See Fig. 5
T
J
= 25°C, I
S
= 58A, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 58A
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
I
D
= 58A
R
G
= 5.6
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