- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384492 > IRF9530 (INTERSIL CORP) 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 100V, 0.300 Ohm,P溝道功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | IRF9530 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 100V, 0.300 Ohm,P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 63K |
| 代理商： | IRF9530 |
4-11
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET
Symbol Showing the In-
tegral Reverse
P-N Junction Diode
-
-
-12
A
Pulse Source to Drain Current
(Note 2)
-
-
-48
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= -12A, V
GS
= 0V,
(Figure 13)
T
J
= 150
o
C, I
SD
= -12A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= -12A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
t
rr
-
300
-
ns
Reverse Recovery Charge
Q
RR
-
1.8
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 5.2mH, R
G
= 25
,
peak I
AS
= 12A. See Figures 15, 16.
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
-2.4
0
25
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-12.0
150
-9.6
75
125
-4.8
-7.2
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
10
10
-1
1
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ R
θ
JA
+T
C
P
DM
t
1
0.1
0.05
0.02
0.01
0.2
0.5
t
2
IRF9530, RF1S9530SM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF9540 | 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs |
| IRF9540NSTRL | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9540 | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9540N | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9540NL | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF9530_R4941 | 功能描述:MOSFET TO-220AB P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9530-220M | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
| IRF9530L | 功能描述:MOSFET P-CH 100V 12A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF9530N | 制造商:International Rectifier 功能描述:MOSFET P TO-220 |
| IRF9530NHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 14A 3PIN TO-220AB - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。