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參數(shù)資料
| 型號(hào)： | IRF9540 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | IRF9540 |
4-15
File Number
2282.6
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRF9540, RF1S9540SM
19A, 100V 0.200 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.
Formerly Developmental Type TA17521.
Features
19A, 100V
r
DS(ON)
= 0.200
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9540
TO-220AB
IRF9540
RF1S9540SM
TO-263AB
RF1S9540
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix9Ato
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF9540NSTRL | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9540 | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9540N | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9540NL | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9540NS | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF9540_PDD | 功能描述:MOSFET Replaced by SFP9540/P-CH/100V/19A/0.2OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9540_R4941 | 功能描述:MOSFET TO-220AB P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9540L | 功能描述:MOSFET P-CH 100V 19A TO-262 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF9540N | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:MOSFET P TO-220 |
| IRF9540NHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 23A 3PIN TO-220AB - Rail/Tube |
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