參數(shù)資料
型號(hào): IRF830FI
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3A I(D) | TO-220VAR
中文描述: 晶體管| MOSFET的| N溝道| 500V五(巴西)直| 3A條(?。﹟對(duì)220VAR
文件頁(yè)數(shù): 6/10頁(yè)
文件大小: 190K
代理商: IRF830FI
IRF830AS/L
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
D D
DRIVER
A
15V
20V
25
50
75
100
125
150
0
100
200
300
400
500
Starting T , Junction Temperature ( C)
E
BOTTOM
ID
2.2A
3.2A
5.0A
TOP
Fig 12d.
Typical Drain-to-Source Voltage
Vs. Avalanche Current
770
775
780
785
790
0.0
1.0
I , Avalanche Current (A)
2.0
3.0
4.0
5.0
A
D
V
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