參數(shù)資料
型號： IRF830FI
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3A I(D) | TO-220VAR
中文描述： 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 3A條（?。﹟對220VAR
文件頁數(shù)： 2/10頁
文件大小： 190K
代理商： IRF830FI
IRF830AS/L
2
www.irf.com
Parameter
Min. Typ. Max. Units
2.8
–––
–––
––– 24 I
D
= 5.0A
–––
–––
6.3
–––
–––
11
–––
10
–––
–––
21
–––
–––
21
–––
–––
15
–––
–––
620
–––
–––
93
–––
–––
4.3
–––
–––
886
–––
–––
27
–––
–––
39
–––
Conditions
V
DS
= 50V, I
D
= 3.0A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 5.0A
R
G
= 14
R
D
= 49
,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 400V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
230
5.0
7.4
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.0A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
430
2.0
1.5
650
3.0
V
ns
μC
Diode Characteristics
5.0
20
A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.60 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
2.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
500
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
–––
–––
–––
–––
–––
1.4
4.5
25
250
100
-100
V
V
GS
= 10V, I
D
= 3.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
–––
–––
Max.
1.7
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
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