- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360932 > IRF821FI TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF821FI |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 450V五（巴西）直|甲（丁）| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | IRF821FI |
IRF820AS/L
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-Channel HEXFET
power MOSFETs
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF82 | N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
| IRF822 | N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
| IRF822FI | N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
| IRF82FI | N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
| IRF830ASTRL | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF821R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-220AB |
| IRF822 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| IRF822FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
| IRF822R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF823 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。