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參數(shù)資料
| 型號(hào)： | IRF7NJZ44V |
| 英文描述： | 60V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package |
| 中文描述： | 60V的單個(gè)N -溝道高可靠性的貼片MOSFET的- 0.5軟件包 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 112K |
| 代理商： | IRF7NJZ44V |
IRF7NA2907
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
4000
8000
12000
16000
20000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
°
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
ID
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
0
100
Q , Total Gate Charge (nC)
200
300
400
500
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
45A
V
= 60V
DS
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