參數(shù)資料
型號(hào): IRF7478
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=60V)
中文描述: 功率MOSFET(減振鋼板基本\u003d 60V的)
文件頁數(shù): 6/8頁
文件大?。?/td> 209K
代理商: IRF7478
IRF7478
6
www.irf.com
Fig 13.
On-Resistance Vs. Gate Voltage
Fig 12.
On-Resistance Vs. Drain Current
Fig 14a&b.
Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b.
Unclamped Inductive Test circuit
and Waveforms
Fig 15c.
Maximum Avalanche Energy
Vs. Drain Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(B R)D SS
I
AS
RG
IAS
0.01
t
p
D.U.T
L
VDS
+
DRIVER
A
15V
20V
25
50
75
100
125
150
0
100
200
300
400
Starting T , Junction Temperature ( C)
E
BOTTOM
ID
1.9A
3.4A
4.2A
TOP
0
10
20
30
40
50
60
ID , Drain Current (A)
0.016
0.018
0.020
0.022
0.024
0.026
0.028
RD
VGS = 10V
VGS = 4.5V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate -to -Source Voltage (V)
0.01
0.02
0.03
0.04
RD
)
ID = 7.0A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7478 制造商:International Rectifier 功能描述:MOSFET N SO-8
IRF7478PBF 功能描述:MOSFET 60V 1 N-CH HEXFET 26mOhms 21nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7478QPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7478QTRPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7478TR 功能描述:MOSFET MOSFET, 60V, 7.6A, 26 mOhm, 21 nC Qg, SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube