參數(shù)資料
型號(hào)： IRF740LPBF
廠商： International Rectifier
英文描述： SMPS MOSFET
中文描述： MOSFET的開關(guān)電源
文件頁數(shù)： 2/10頁
文件大小： 297K
代理商： IRF740LPBF
2
www.irf.com
Parameter
Min. Typ. Max. Units
4.9
–––
–––
––– 36 I
D
= 10A
–––
–––
9.9
–––
–––
16
–––
10
–––
–––
35
–––
–––
24
–––
–––
22
–––
–––
1030 –––
–––
170
–––
–––
7.7
–––
–––
1490 –––
–––
52
–––
–––
61
–––
Conditions
V
DS
= 50V, I
D
= 6.0A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 320V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 200V
I
D
= 10A
R
G
= 10
R
D
= 19.5
,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 320V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 320V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
630
10
12.5
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
T
J
= 25°C, I
F
= 10A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
240
1.9
2.0
360
2.9
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
10
40
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.48 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
2.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
400
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
–––
–––
–––
–––
–––
0.55
4.0
25
250
100
-100
V
V
GS
= 10V, I
D
= 6.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 400V, V
GS
= 0V
V
DS
= 320V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
–––
–––
Max.
1.0
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Thermal Resistance
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF740PBF 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF740PBF 制造商:International Rectifier 功能描述:MOSFET
IRF740R 制造商:Harris Corporation 功能描述:
IRF740S 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF740S2515 制造商:Rochester Electronics LLC 功能描述:- Bulk
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