參數(shù)資料
型號(hào): IRF7404
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 1/24頁(yè)
文件大小: 416K
代理商: IRF7404
REV. C
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ADN8830
Thermoelectric Cooler Controller
FEATURES
High Efficiency
Small Size: 5 mm 5 mm LFCSP
Low Noise: <0.5% TEC Current Ripple
Long-Term Temperature Stability: 0.01 C
Temperature Lock Indication
Temperature Monitoring Output
Oscillator Synchronization with an External Signal
Clock Phase Adjustment for Multiple Controllers
Programmable Switching Frequency up to 1 MHz
Thermistor Failure Alarm
Maximum TEC Voltage Programmability
APPLICATIONS
Thermoelectric Cooler (TEC) Temperature Control
Resistive Heating Element Control
Temperature Stabilization Substrate (TSS) Control
FUNCTIONAL BLOCK DIAGRAM
PID COMPENSATION
NETWORK
TEMPERATURE
MEASUREMENT
AMPLIFIER
PWM
CONTROLLER
FROM
THERMISTOR
TEMPERATURE
SET
INPUT
VOLTAGE
REFERENCE
V
REF
OSCILLATOR
FREQUENCY/PHASE
CONTROL
P-CHANNEL
(UPPER MOSFET)
N-CHANNEL
MOSFET
DRIVERS
P-CHANNEL
(LOWER MOSFET)
N-CHANNEL
GENERAL DESCRIPTION
The ADN8830 is a monolithic controller that drives a thermo-
electric cooler (TEC) to stabilize the temperature of a laser diode
or a passive component used in telecommunications equipment.
This device relies on a negative temperature coefficient (NTC)
thermistor to sense the temperature of the object attached to the
TEC. The target temperature is set with an analog input voltage
either from a DAC or an external resistor divider.
The loop is stabilized by a PID compensation amplifier with
high stability and low noise. The compensation network can be
adjusted by the user to optimize temperature settling time. The
component values for this network can be calculated based on
the thermal transfer function of the laser diode or obtained
from the lookup table given in the Application Notes section.
Voltage outputs are provided to monitor both the temperature of
the object and the voltage across the TEC. A voltage reference
of 2.5 V is also provided.
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IRF750A N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管(漏源電壓為400V,導(dǎo)通電阻為0.3Ω,漏電流為15A))
IRF750 N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管(漏源電壓為400V,導(dǎo)通電阻為0.3Ω,漏電流為15A))
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