- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360932 > IRF7341QTR TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DSS | 5.1A I(D) | SO PDF資料下載
參數(shù)資料
| 型號： | IRF7341QTR |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DSS | 5.1A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 55V的五（巴西）直| 5.1AI（四）|蘇 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 184K |
| 代理商： | IRF7341QTR |
IRF730AS/L
10
www.irf.com
Tape & Reel Information
D
2
Pak
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 19mH
R
G
= 25
, I
AS
= 5.5A. (See Figure 12)
I
SD
≤
5.5A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Uses IRF730A data and test conditions
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 5/00
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相關PDF資料 |
PDF描述 |
|---|---|
| IRF7342D2 | -55V FETKY - MOSFET and Schottky Diode in a SO-8 package |
| IRF734S | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.9A I(D) | TO-220AB |
| IRF730 | PowerMOS transistor Avalanche energy rated |
| IRF730 | BEAD,FERRITE,1000 OHMS,+/-25%,100MA,0603 |
| IRF730A | SMPS MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7341QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7341TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 4.7A 8-Pin SOIC T/R |
| IRF7341TRPBF | 功能描述:MOSFET MOSFT DUAL NCh 55V 4.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7341TRPBF-CUT TAPE | 制造商:IR 功能描述:Dual N-Channel 55 V 2 W 24 nC Hexfet Power Mosfet Surface Mount - SOIC-8 |
| IRF7342 | 功能描述:MOSFET 2P-CH 55V 3.4A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
發(fā)布緊急采購，3分鐘左右您將得到回復。