參數(shù)資料
型號(hào): IRF7341Q
英文描述: 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
中文描述: 55V的雙N溝道HEXFET功率MOSFET的SO - 8封裝
文件頁(yè)數(shù): 5/10頁(yè)
文件大?。?/td> 184K
代理商: IRF7341Q
IRF730AS/L
www.irf.com
5
Fig 10a.
Switching Time Test Circuit
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
DS
Pulse Width
≤ 1
μs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25
50
T , Case Temperature
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
I
D
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
2. Peak T =P
Notes:
1. Duty factor D = t / t
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
(THERMAL RESPONSE)
SINGLE PULSE
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