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參數(shù)資料
| 型號： | IRF7306 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 113K |
| 代理商： | IRF7306 |
HEXFET
Power MOSFET
PD - 9.1241C
IRF7306
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Generation V Technology
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Ultra Low On-Resistance
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Dual P-Channel Mosfet
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
V
DSS
= -30V
R
DS(on)
= 0.10
Parameter
Max.
-4.0
-3.6
-2.9
-14
2.0
0.016
±20
-5.0
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
10 Sec. Pulsed Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
W
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
-55 to + 150
Absolute Maximum Ratings
A
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
8/25/97
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
R
θ
JA
°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7306HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 3.6A 8-Pin SOIC |
| IRF7306PBF | 功能描述:MOSFET 20V DUAL N-CH HEXFET 100mOhms 16.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7306QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7306QPBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET |
| IRF7306QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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