參數(shù)資料
型號(hào)： IRF7317
廠商： International Rectifier
英文描述： LED, LOW CURRENT, 5MM
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 156K
代理商： IRF7317
N-Ch P-Ch
V
DSS
20V
-20V
R
DS(on)
0.029
0.058
N-Channel
20
P-Channel
-20
± 12
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
T
A
= 25°C
T
A
= 70°C
6.6
5.3
26
2.5
-5.3
-21
-2.5
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
I
DM
I
S
T
A
= 25°C
T
A
= 70°C
2.0
1.3
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
100
4.1
150
-2.9
mJ
A
mJ
0.20
5.0
-5.0
V/ ns
-55 to + 150 °C
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1568B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
12/9/97
SO-8
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
IRF7317
Description
Thermal Resistance Ratings
Parameter
Symbol
R
θ
JA
Limit
62.5
Units
Maximum Junction-to-Ambient
°C/W
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
Symbol Maximum
Units
D1
N-CHANNEL MOSFET
1
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
2
3
4
5
6
7
Absolute Maximum Ratings
( T
A
= 25°C Unless Otherwise Noted)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7317HR 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 20V 6.6A/5.3A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 20V 6.6A/5.3A 8PIN SO - Rail/Tube
IRF7317PBF 功能描述:MOSFET 20V DUAL N / P CH 12V VGS MAX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7317TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 20V 6.6A/5.3A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 20V 6.6A/5.3A 8PIN SO - Tape and Reel
IRF7317TRPBF 功能描述:MOSFET MOSFT DUAL N/PCh 20V 6.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7319 制造商:International Rectifier 功能描述:MOSFET DUAL NP LOGIC SO-8
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