參數(shù)資料
型號(hào)： IRF710B
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 400V N-Channel MOSFET
中文描述： 2 A, 400 V, 3.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 859K
代理商： IRF710B
2001 Fairchild Semiconductor Corporation
November 2001
Rev. A, November 2001
I
IRF710B/IRFS710B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
Features
2.0A, 400V, R
DS(on)
= 3.4
@V
GS
= 10 V
Low gate charge ( typical 7.7 nC)
Low Crss ( typical 6.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRF710B
IRFS710B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
400
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
2.0
1.3
6.0
2.0 *
1.3 *
6.0 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
100
2.0
3.6
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
36
0.29
23
0.19
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
IRF710B
3.44
0.5
62.5
IRFS710B
5.37
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D
相關(guān)PDF資料
PDF描述
IRFS710B 400V N-Channel MOSFET
IRF710 N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為400V，導(dǎo)通電阻為3.6Ω，漏電流為2A）)
IRF720A N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為400V，導(dǎo)通電阻為1.8Ω，漏電流為3.3A）)
IRF7401 Thermoelectric Cooler Controller
IRF7404 HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF710L 功能描述:MOSFET N-CH 400V 2A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF710PBF 功能描述:MOSFET N-Chan 400V 2.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF710R 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF710S 功能描述:MOSFET N-Chan 400V 2.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF710SPBF 功能描述:MOSFET N-Chan 400V 2.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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