參數(shù)資料
型號(hào): IRF710
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述: 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 56K
代理商: IRF710
4-223
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
1
10
10
2
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
10
2
1
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
10
-2
1ms
10ms
DC
100
μ
s
10
μ
s
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
40
80
120
160
0
3.0
2.4
1.8
0
1.2
I
D
,
5.5V
4.5V
4.0V
0.6
200
V
GS
= 5.0V
6.0V
10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
3
6
9
12
0
15
3.0
2.4
1.8
0
1.2
I
D
,
0.6
6.0V
4.5V
V
GS
= 5.0V
4.0V
5.5V
10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
V
SD
, GATE TO SOURCE VOLTAGE (V)
10
1
10
-2
0
2
4
6
8
10
T
J
= 150
o
C
T
J
= 25
o
C
0.1
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
4
I
D,
DRAIN CURRENT (A)
1
2
3
0
5
30
24
18
0
12
r
D
,
O
)
6
V
GS
= 20V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
20
3.0
1.8
0.6
100
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
2.4
1.2
0
-60
140
O
-40
60
160
120
80
40
0
-20
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 2.0A, V
GS
= 10V
IRF710
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