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參數(shù)資料
| 型號： | IRF710 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 56K |
| 代理商： | IRF710 |
4-222
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
2.0
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
5.0
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 2.0A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 2.0A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 2.0A, dI
SD
/dt = 100A/
μ
s
-
-
1.6
V
Reverse Recovery Time
t
rr
110
-
520
ns
Reverse Recovered Charge
Q
RR
0.40
-
1.4
μ
C
NOTES:
2. Pulse Test: Pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 53
μ
H, R
G
= 25
, peak I
AS
= 2A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50
75
100
25
150
2.0
1.6
1.2
0
0.8
I
D
D
0.4
125
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
1
DUTY FACTOR: D = t
t
2
P
DM
t
1
t
2
Z
θ
J
,
10
1
10
-2
10
-5
10
-4
10
-3
0.1
10
t
1
, RECTANGULAR PULSE DURATION (s)
10
-2
SINGLE PULSE
0.1
0.02
0.01
0.1
0.2
0.5
0.05
IRF710
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| IRF7101TR | 制造商:International Rectifier 功能描述: |
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